All-optical logic gate realization due to laser crossing in thin-film GaAs on glass

Bruno Ullrich

Centers for Materials and Photochemical Sciences,
Department of Physics and Astronomy,
Bowling Green State University, Bowling Green, Ohio 43403-0224

Abstract

Employing pulsed-laser deposition, we formed thin-film GaAs on glass. Using these films as cross media for continuous laser emissions at 532 nm and 633 nm, extremely straightforward all-optical logic gates were realized. The laser superposition causes a substantial local absorption enhancement due to an alteration of the electronic state of the sample and transmission digitizing up to 20% has been observed at 633 nm. The striking simplicity, the electronic nature of the switch, and the undemanding core of the concept make laser crossing very promising for smart applications in digital photonics.